XIPD is derived from the X-FAB XR013 130nm RF SOI process and leverages an engineered substrate along with a thick copper metallisation layer.
The technology enables customers to integrate passive elements (inductors, capacitors and resistors) directly into their device designs, resulting in significant space and cost savings.
Fabrication is undertaken at X-FAB’s facility in Corbeil-Essonnes, France, capitalizing on the company’s extensive experience in copper metallization.
The ongoing roll-out of 5G cellular infrastructure along with the development of 6G communications and the emergence of the latest generation of radar and satellite communications technology, have meant that devices are needed that exhibit wider frequency support.
Through use of the XIPD platform, demands for more compact RF/EMI filtering, matching networks,…
