High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics

Flexible ITO FeFET device structure

The device structure of the FeFETs is characterized. The optical microscope image of the ITO ferroelectric memory prepared on the flexible MICA substrate in the bent state is shown in Fig. 1a. The device is highly transparent and bendable. Figure 1b is an enlarged structural diagram of a single ITO FeFET. W/Ti and Ni are used as the bottom and top electrodes respectively, where the bottom electrode is prepared in the Al₂O₃ dielectric layer through a buried gate process. The specific preparation process of the device is shown in Fig. 1c. The thermal budget of the entire preparation process is within 400 °C BEOL compatibility. The micrograph of the device is shown in Supplementary Fig. 1, displaying the shape of gate and source/drain with ITO channel. The channel length and width are 5 μm and 50 μm, respectively.